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| SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB PARTMARKING DETAIL - 179 FMMT5179 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Temperature Range PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Static Forward Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector-Base Capacitance Small Signal Current Gain Noise Figure Common-Emitter Amplifier Power Gain SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) VBE(sat) fT Ccb hfe NF Gpe 15 25 3 900 25 MIN. 12 20 2.5 0.02 1.0 250 0.4 1.0 2000 1 300 14 4.5 ps dB dB V V MHz pF SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg MAX. VALUE 20 12 2.5 50 330 -55 to +150 SOT23 UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). UNIT CONDITIONS. V V V A A IC= 3mA, IB=0 IC= 1A, IE=0 IE=10A, IC=0 VCB=15V, IE=0 VCB=15V, IE=0, Tamb=150C IC=3mA, VCE=1V IC=10mA, IB=1mA IC=10mA, IB=1mA IC=5mA, VCE=6V, f=100MHz IE=0, VCB=10V, f=1MHz IC=2mA, VCE=6V, f=1KHz IE=2mA, VCB=6V, f=31.9MHz IC=1.5mA, VCE=6V RS=50, f=200MHz IC=5mA, VCE=6V f=200MHz Collector Base Time Constant rbCc Spice parameter data is available upon request for this device 3 - 169 FMMT5179 TYPICAL CHARACTERISTICS 200 175C 0.8 150 100C 25C VCE=1V 1.0 VCE=1V -55C VBE - (Volts) hFE -Gain 0.6 100 25C 100C 175C 0.4 -55C 50 0.2 0 0.1 1 10 100 0 0.1 1 10 100 IC - (mA) IC - (mA) hFE v IC VBE(on) v IC 1500 VCE=6V f=100MHz 1.2 1.0 IE=0 f=1MHz fT - (MHz) 1000 0.8 CCB - (pF) 0.1 1 10 100 0.6 0.4 0.2 500 0 0 0.1 1 10 30 IC - (mA) VCB - (Volts) fT v IC CCB v VCB 3 - 170 |
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